CBRHD-04TR13 View Datasheet(PDF) - Central Semiconductor

Part Name

Description

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CBRHD-04TR13

IC RECT BRIDGE 200V 0.5A HD DIP

Central Semiconductor 

CBRHD SERIES

SURFACE MOUNT SILICON

HIGH DENSITY

0.5 AMP

BRIDGE RECTIFIER

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBRHD series

devices are silicon full wave bridge rectifiers mounted

in a durable epoxy surface mount molded case, utilizing

glass passivated chips.

MARKING CODES:

CBRHD-02: CBD2

CBRHD-06: CBD6

CBRHD-04: CBD4

CBRHD-10: CBD10

HD DIP CASE

FEATURES:

• Efficient use of board space: requires only 42mm2 of

board space vs. 120mm2 of board space needed for

industry standard 1.0 Amp surface mount bridge rectifier.

• 50% higher density (Amps/mm2) than the industry

standard 1.0 Amp surface mount bridge rectifier.

• Glass passivated chips for high reliability.

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL -02

Peak Repetitive Reverse Voltage

VRRM 200

DC Blocking Voltage

VR

200

RMS Reverse Voltage

VR(RMS) 140

Average Forward Current (TA=40°C) (Note 1)

IO

Average Forward Current (TA=40°C) (Note 2)

IO

Peak Forward Surge Current

IFSM

Operating & Storage Junction Temperature

TJ, Tstg

CBRHD

-04

-06

400 600

400 600

280 420

0.5

0.8

30

-65 to +150

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

TYP

MAX

IR

VR=Rated VRRM

5.0

IR

VR=Rated VRRM, TA=125°C

500

VF

IF=400mA

1.0

CJ

VR=4.0V, f=1.0MHz

20

Notes: (1) Mounted on Glass-Epoxy PCB.

(2) Mounted on Ceramic PCB.

-10*

1000

1000

700

UNITS

V

V

V

A

A

A

°C

UNITS

μA

μA

V

pF

* Available on special order, please consult factory.

R5 (18-February 2016)

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