2SD2661(RevA) View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
View to exact match
2SD2661 Datasheet PDF : 3 Pages
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Transistors
2SD2661
Low frequency amplifier transistor(12V, 2A)
2SD2661
zFeatures
Low VCE(sat) ≤ 180mV
(IC / IB = 1A / 50mA)
zExternal dimensions (Unit : mm)
4.0
1.0
2.5
0.5
(1)
(2)
(3)
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : FW
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector Power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1
∗2
PW=1ms
Mounted
Soinngale40P+u4ls0e+
0.7mm
ceramic
substrcte
Limits
15
12
6
2
4
500
2 ∗2
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse)∗1
mW
W
°C
°C
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SD2661
Taping
T100
1000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
15
12
6
−
−
270
−
−
−
Typ.
−
−
−
−
−
−
90
360
20
Max.
−
−
−
100
100
680
180
−
−
Unit
V
V
V
nA
nA
−
mV
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=6V
VCE=2V, IC=200mA
IC / IB=1A / 50mA
VCE=2V, IE=−200mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Rev.A
1/2
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