2SD2662T100(RevA) View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
View to exact match
2SD2662T100 Datasheet PDF : 3 Pages
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Transistors
Low frequency amplifier
2SD2662
2SD2662
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) ≦ 350mV
At IC = 1A / IB = 50mA
zExternal dimensions (Unit : mm)
4.0
1.0
2.5
0.5
(1)
(2)
(3)
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : FZ
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
Emitter-base voltage
VCEO
30
VEBO
6
Collector current
IC
1.5
ICP
3
Power dissipation
PC
500
2 ∗2
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Mounted on a 40×40× t 0.7mm Ceramic substrate
Unit
V
V
V
A
A∗1
mW
W
°C
°C
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SD2662
Taping
T100
1000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
30
−
−
V IC=10µA
30
−
−
V IC=1mA
6
−
−
V IE=10µA
−
−
100
nA VCB=30V
−
−
100
nA VEB=6V
−
160 350 mV IC=1A, IB=50mA
270
−
680
− VCE=2V, IC=100mA ∗
−
330
−
MHz VCE=2V, IE=−100mA, f=100MHz ∗
−
11
−
pF VCB=10V, IE=0A, f=1MHz
Rev.A
1/2
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