MMBTA13LT1G_06 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
View to exact match
MMBTA13LT1G_06 Datasheet PDF : 6 Pages
| |||
MMBTA13LT1, MMBTA14LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
V(BR)CES
30
−
ICBO
−
100
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
−
100
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
MMBTA13
MMBTA14
5000
−
10,000
−
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest.
MMBTA13
MMBTA14
10,000
−
20,000
−
VCE(sat)
−
1.5
VBE
−
2.0
fT
125
−
Unit
Vdc
nAdc
nAdc
−
Vdc
Vdc
MHz
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
Share Link: 