MMBTA13LT1 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
View to exact match
MMBTA13LT1 Datasheet PDF : 8 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA13LT1/D
Darlington Amplifier Transistors
NPN Silicon
COLLECTOR 3
BASE
1
MMBTA13LT1
MMBTA14LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
Symbol
VCES
VCBO
VEBO
IC
Value
30
30
10
300
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
EMITTER 2
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CES
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
30
—
Vdc
—
100
nAdc
—
100
nAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
Share Link: 