SGSD100(1997) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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SGSD100 Datasheet PDF : 6 Pages
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SGSD100
SGSD200
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s MONOLITHIC DARLINGTON
CONFIGURATION
APPLICATIONS:
s GENERAL PURPOSE SWITCHING
APPLICATION
s GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Volta ge (IE = 0)
VCEO Collector-Emitte r Voltage (IB = 0 )
IC Collector Current
ICM Collector Peak Current
IB
Base Current
IBM Base Peak Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temp erature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
September 1997
NPN
PNP
Value
SGSD 1 0 0
SGSD 2 0 0
80
80
25
40
6
10
130
-65 to 150
150
Unit
V
V
A
A
A
A
W
oC
oC
1/6
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