IDT61298SA12Y(2007) View Datasheet(PDF) - Integrated Device Technology
Part Name
Description
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IDT61298SA12Y Datasheet PDF : 8 Pages
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IDT61298SA
CMOS Static RAM 256K (64K x 4-Bit)
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Symbol
Parameter
|ILI| Input Leakage Current
|ILO| Output Leakage Current
VOL Output Low Voltage
VOH Output High Voltage
Test Conditions
VCC = Max., VIN = GND to VCC
VCC = Max., CS = VIH, VOUT = GND to VCC
IOL = 8mA, VCC = Min.
IOL = 10mA, VCC = Min.
IOH = -4mA, VCC = Min.
Commercial Temperature Range
Min.
____
____
____
____
2.4
IDT61298SA
Typ.
____
____
____
____
___
Max. Unit
5
µA
5
µA
0.4
V
0.5
___
V
2971 tbl 09
AC Electrical Characteristics (VCC = 5.0V ± 10%)
61298SA12
Symbol
Read Cycle
tRC
Read Cycle Time
tAA
Address Access Time
tACS
Chip Select Access Time
tCLZ(1)
Chip Select to Output in Low-Z
tCHZ(1)
Chip Desele ct to Output in High-Z
tOE
Output Enable to Output Valid
tOLZ(1)
Output Enab le to Output in Low-Z
tOHZ(1)
Output Disab le to Output in High-Z
tOH
Output Hold from Address Change
tPU(1)
Chip Select to Power-Up Time
tPD(1)
Chip Deselect to Power-Down Time
Write Cycle
tWC
Write Cycle Time
tCW
Chip Select to End-of-Write
tAW
Address Valid to End-of-Write
tAS
Address Set-up Time
tWP
Write Pulse Width
tWR
Write Recovery Time
tDW
Data Valid to End-of-Write
tDH
Data Hold Time
tWHZ(1)
Write Enab le to Output in High-Z
tOW(1)
Output Active from End-of-Write
Parameter
Min. Max.
12
____
____
12
____
12
4
____
____
6
____
6
0
____
____
6
3
____
0
____
____
12
12
____
9
____
9
____
0
____
9
____
0
____
6
____
0
____
____
6
4
____
NOTE:
1. This parameter is guaranteed with AC test load (Figure 2) by device characterization, but is not production tested.
4
61298SA15
Min. Max. Unit
15
____
ns
____
15 ns
____
15 ns
4
____
ns
____
7
ns
____
7
ns
0
____
ns
____
6
ns
3
____
ns
0
____
ns
____
15 ns
15
____
ns
10
____
ns
10
____
ns
0
____
ns
10
____
ns
0
____
ns
7
____
ns
0
____
ns
____
6
ns
4
____
ns
2971 tbl 10
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