1089AS View Datasheet(PDF) - Bourns, Inc
Part Name
Description
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1089AS Datasheet PDF : 12 Pages
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TISP61089 Gated Protector Series
Recommended Operating Conditions
C ompon ent
CG Gate decoupling capacitor
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for GR-1089-CORE first-level and second-level surge survival
RS Series resistor for GR-1089-CORE intra-building port surge survival
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
Min Typ Max Unit
100 220
nF
25
Ω
40
Ω
8
Ω
10
Ω
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max Unit
ID Off-state current
VD = VDRM, VGK = 0
TJ = 25 °C
TJ = 85 °C
-5
µA
-50
µA
V(BO) Breakover voltage
2/10 µs, IPP = -56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF
2/10 µs, IPP = -100 A, RS = 50 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -96 A, RS = 52 Ω, VGG = -48 V, CG = 220 nF
-57
-60
V
-60
-64
Gate-cathode impulse
VGK(BO) breakover voltage
2/10 µs, IPP = -56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF
2/10 µs, IPP = -100 A, RS = 50 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = -96 A, RS = 52 Ω, VGG = -48 V, CG = 220 nF
9
12
V
12
16
VF Forward voltage
IF = 5 A, tw = 200 µs
3
V
VFRM
Peak forward recovery
voltage
2/10 µs, IPP = 56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF
2/10 µs, IPP = 100 A, RS = 50 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = 53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF
1.2/50 µs, IPP = 96 A, RS = 52 Ω, VGG = -48 V, CG = 220 nF
6
8
V
8
12
IH Holding current
IT = -1 A, di/dt = 1A/ms, VGG = -48 V
-150
mA
IGKS Gate reverse current VGG = VGK = VGKRM, VKA = 0
TJ = 25 °C
TJ = 85 °C
-5
µA
-50
µA
IGT Gate trigger current
IT = -3 A, tp(g) ≥ 20 µs, VGG = -48 V
5
mA
Gate-cathode trigger
VGT voltage
IT = -3 A, tp(g) ≥ 20 µs, VGG = -48 V
2.5
V
QGS
CKA
Gate switching charge
Cathode-anode off-
state capacitance
1.2/50 µs, IPP = -53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF
f = 1 MHz, Vd = 1 V, IG = 0, (see Note 3)
VD = -3 V
VD = -48 V
0.1
µC
100
pF
50
pF
NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Pa ram ete r
RθJA
Junction to free air thermal resistance
Test Conditions
Min Typ Max Unit
TA = 25 °C, EIA/JESD51-3
PCB, EIA/JESD51-2
environment, PTOT = 1.7 W
D Package
P package
120
°C/ W
100
NOVEMBER 1995 - REVISED AUGUST 2002
Specifications are subject to change without notice.
3
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