TGP2103(2005) View Datasheet(PDF) - TriQuint Semiconductor
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TGP2103 Datasheet PDF : 9 Pages
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Advance Product Information
November 16, 2005
TGP2103
TABLE I
MAXIMUM RATINGS
Symbol
VC
IC
PIN
PD
TCH
TM
TSTG
Parameter
Control Voltage Range
Control Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
-8V to 0V
1 mA
20 dBm
0.1 W
150 0C
320 0C
-65 to 150 0C
Notes
1/ 2/
1/ 2/
1/ 2/
1/ 2/
3/
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power
shall not exceed PD at a package base temperature of 70°C
3/ Junction operating temperature will directly affect the device median time to
failure (MTTF). For maximum life, it is recommended that junction temperatures
be maintained at the lowest possible levels.
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25qC, Nominal)
(VC = -5V)
P aram e ter
Insertion Loss
Peak Amplitude Error
RMS Amplitude Error
Peak Phase Shift Error
RMS Phase Shift Error
Input Return Loss
Output Return Loss
Test
Conditions
8.5 – 11GHz
8.5 – 11GHz
8.5 – 11GHz
8.5 – 11GHz
8.5 – 11GHz
8.5 – 11GHz
8.5 – 11GHz
Typ Units Notes
5
dB
0.5 dB
0.2 dB
3
deg
2
deg
15
dB
12
dB
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
m easu rem ents.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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