Product Data Sheet
March 5, 2007
TGA4530
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
PARAMETER
Frequency Range
Drain Voltage, Vd
Drain Current, Id
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Saturated Output Power @ Pin = 16dBm, Psat
Output Power @ 1dB Gain Compression, P1dB
Output Third Order Intercept, OTOI @ 20dBm/Tone
Small Signal Gain Temperature Coefficient
Noise Figure @ 19GHz
TYPICAL
17 - 21
7
825
-0.45
20
20
20
32
30
42
-0.03
6
UNITS
GHz
V
mA
V
dB
dB
dB
dBm
dBm
dBm
dB/0C
dB
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
TCH
(OC)
θJC
(°C/W)
TM
(HRS)
θJC Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 825 mA
Pdiss = 5.78 W
Small Signal
150
14.7
1.0E+6
Vd = 7 V
θJC Thermal Resistance Id = 1050 mA @ Psat
150
(channel to Case)
Pout = 1.6 W (RF)
Pdiss = 5.75 W
14.7
1.0E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 65oC baseplate temperature.
.
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com