TCM811/TCM812
VDD = 5V for L/M versions, VDD = 3.3V for T/S versions, VDD = 3V for R version, VDD = 2.0V for F version.
Unless otherwise noted, TA = –40°C to +85°C. Typical values are at TA = +25°C. (Note 1)
Parameters
Sym Min
Typ Max Units
Conditions
MR Input Threshold
MR Pull-up Resistance
VIH
2.3
0.7 VDD
VIL
—
—
10
—
—
V
VDD > VTH(MAX), TCM81_L/M
—
—
V
VDD > VTH(MAX), TCM81_R/S/T/F
—
0.8
V
VDD > VTH(MAX), TCM81_L/M
— 0.25 VDD
V
VDD > VTH(MAX), TCM81_R/S/T/F
20
40
kΩ
RESET Output Voltage Low VOL
—
(TCM811)
—
—
—
0.3
—
0.4
—
0.3
RESET Output Voltage High VOH 0.8 VDD
—
—
(TCM811)
VDD - 1.5 —
—
RESET Output Voltage Low VOL
—
(TCM812)
—
—
0.2
—
0.3
—
—
0.4
RESET Output Voltage High VOH 0.8 VDD
—
—
(TCM812)
V TCM811R/S/T only;
ISINK = 1.2 mA, VDD = VTH(MIN)
V TCM811F only;
ISINK = 500 µA, VDD = VTH(MIN)
V TCM811L/M only;
ISINK = 3.2 mA, VDD = VTH(MIN)
ISINK = 3.2 mA, VDD = VTH(MIN)
V TCM811R/S/T/F only;
ISOURCE = 500 µA, VDD > VTH(MAX)
V TCM811L/M only;
ISOURCE = 800 µA, VDD > VTH(MAX)
V TCM812F only, ISINK = 500 µA,
VDD = VTH(MAX)
V TCM812R/S/T only, ISINK = 1.2 mA,
VDD = VTH(MAX)
V TCM812L/M only, ISINK = 1.2 mA,
VDD = VTH(MAX)
V
ISOURCE = 150 µA, VDD ≤ VTH(MIN)
Note 1: Production testing done at TA = +25°C and +85°C, overtemperature limits are tested with periodic QA tests
in production.
© 2007 Microchip Technology Inc.
DS21615C-page 3