TB62702P(2003) View Datasheet(PDF) - Toshiba

Part Name

Description

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TB62702P
(Rev.:2003)

TOSHIBA Bi−CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

BLOCK DIAGRAM

TB62702P/F

MAXIMUM RATINGS (Ta = 25°C, VSS = 0 V)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Voltage

Input Voltage

Output Drain−Source Voltage

Output Current

P

Power Dissipation

F

Operating Temperature

Storage Temperature

VDD

VIN

VOUT

IOUT

PD (Note 1)

Topr

Tstg

−0.3~7.0

−0.3~VDD +0.3

−0.4~30

30

1.47

0.96 (Note 2)

−40~85

−55~150

V

V

V

mA / bit

W

°C

°C

Note 1: Delated above 25°C in the proportion of 11.7 mW / °C(P−type),

7.7 mW / °C(F−type).

Note 2: On Glass Epoxy (50 × 50 × 1.6mm Cu 40%)

2

2003-05-14

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