STPS1H100UY View Datasheet(PDF) - STMicroelectronics
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Description
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STPS1H100UY Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS1H100-Y
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
IF(RMS) Forward rms voltage
10
IF(AV) Average forward current
TL = 160 °C δ = 0.5
1
IFSM Surge non repetitive forward current tp =10 ms sinusoidal
50
IRRM Repetitive peak reverse current
tp = 2 µs F = 1 kHz square
1
IRSM Non repetitive peak reverse current tp = 100 µs square
1
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
1500
Tstg Storage temperature range
Tj Operating junction temperature (1)
- 65 to + 175
- 40 to + 175
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth(j-l) Junction to lead
SMA
SMB
30
°C/W
25
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Tj = 25 °C
Reverse leakage current
VR = VRRM
Tj = 125 °C
VF(2) Forward voltage drop
Tj = 25 °C
IF = 1 A
Tj = 125 °C
Tj = 25 °C
IF = 2 A
Tj = 125 °C
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.54 x IF(AV) + 0.08 IF2(RMS)
4
µA
0.2
0.5
mA
0.77
0.58 0.62
V
0.86
0.65
0.7
2/9
Doc ID 17935 Rev 1
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