D30NF03LT View Datasheet(PDF) - STMicroelectronics

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Description

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D30NF03LT

N-channel 30V - 0.017Ω - 30A - DPAK STripFET™ II Power MOSFET

STMicroelectronics 

STD30NF03LT

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)

VGS

Gate- source voltage

ID(1)

Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Ptot

Total dissipation at TC = 25°C

Derating Factor

dv/dt (3) Peak diode recovery voltage slope

EAS (4)

Single pulse avalanche energy

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Current limited by package

2. Pulse width limited by safe operating area.

3. ISD ≤30A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

4. Starting Tj = 25 °C, ID = 15A VDD = 25V

Value

30

30

± 20

30

21

120

50

0.33

4

450

-55 to 175

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max

3.0

Rthj-amb Thermal resistance junction-ambient max

100

TJ

Maximum lead temperature for soldering purpose

275

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 15 V)

Max value

40

2.3

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

°C/W

°C/W

°C

Unit

A

J

3/13

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