ST333S View Datasheet(PDF) - International Rectifier
Part Name
Description
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ST333S Datasheet PDF : 10 Pages
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ST333S Series
On-state Conduction
Parameter
VTM Max. peak on-state voltage
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of forward
slope resistance
rt2
High level value of forward
slope resistance
IH
Maximum holding current
IL
Typical latching current
ST333S
1.51
0.91
Units Conditions
ITM= 1040A, TJ = TJ max, tp = 10ms sine wave pulse
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.92
(I > π x IT(AV)), TJ = TJ max.
0.58
0.58
600
1000
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I > π x IT(AV)), TJ = TJ max.
mA TJ = 25°C, IT > 30A
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Max. turn-off time
Blocking
Parameter
dv/dt
IRRM
IDRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST333S
1000
1.0
Min Max
10 30
Units
A/µs
µs
Conditions
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
ST333S
500
50
Units Conditions
V/µs
TJ = TJ max. linear to 80% VDRM, higher value
available on request
mA TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
PGM Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger
VGD Max. DC gate voltage not to trigger
ST333S
60
10
10
20
5
Units Conditions
W TJ = TJ max, f = 50Hz, d% = 50
A
TJ = TJ max, tp ≤ 5ms
V
TJ = TJ max, tp ≤ 5ms
200
3
20
0.25
mA
TJ = 25°C, VA = 12V, Ra = 6Ω
V
mA
V
TJ = TJ max, rated VDRM applied
D-503
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