1N914 View Datasheet(PDF) - Vishay Semiconductors
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Description
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1N914 Datasheet PDF : 3 Pages
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1N914
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Breakdown voltage
Peak reverse current
Diode capacitance
Reverse recovery time
IF = 10 mA
IR = 100 μA
VR = 75 V
VR = 20 V, Tj = 150 °C
VR = 20 V
VR = 0, f = 1 MHz
IF = 10 mA, iR = 1 mA,
VR = 6 V, RL = 100
VF
V(BR)
100
IR
IR
IR
CD
trr
MAX.
1
5
50
25
4
4
UNIT
V
V
μA
μA
nA
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
1N914
10
1
Scattering Limit
1000
Tj = 25 °C
100
Scattering Limit
10
0.1
0
94 9170_1
T j= 25 °C
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
1
1
94 9098
10
100
VR- Reverse Voltage (V)
Fig. 2 - Reverse Current vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35
Cathode Identification
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 1.8, 06-Dec-13
2
Document Number: 85622
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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