UTRON
Rev. 1.1
ABSOLUTE MAXIMUM RATINGS*
UT62L1024(E)
128K X 8 BIT LOW POWER CMOS SRAM
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to Vss
Operating Temperature
VTERM
TA
-0.5 to +4.6
V
-20 to 80
℃
Storage Temperature
TSTG
-65 to +150
℃
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE1 CE2
OE
WE I/O OPERATION
Standby
H
X
X
X
High - Z
Standby
X
L
X
X
High -Z
Output Disable
L
H
H
H
High - Z
Read
L
H
L
H
Write
L
H
X
L
Note: H = VIH, L=VIL, X = Don't care.
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ISB,ISB1
ICC, ICC1
ICC, ICC1
ICC, ICC1,
DC ELECTRICAL CHARACTERISTICS (VCC = 2.7V ~ 3.6V, TA = -20℃~80℃)
PARAMETER
SYMBOL TEST CONDITION
Input High Voltage
VIH
Input Low Voltage
VIL
Input Leakage Current IIL
VSS ≦VIN ≦VCC
Output Leakage Current IOL
VSS ≦VI/O≦VCC
CE1 =VIH or CE2 = VIL or
MIN.
2.0
- 0.5
-1
-1
Output High Voltage
VOH
Output Low Voltage
VOL
Average Operating
ICC
Power Supply Courrent
ICC1
Standby Power
ISB
Supply Current
ISB1
OE = VIH or WE = VIL
IOH = - 1mA
2.0
IOL= 4mA
-
Cycle time = Min.,100% Duty, 35 -
CE1 =VIL, CE2 = VIH,
55 -
II/O = 0mA
70 -
Cycle time = 1µs, 100% Duty,
. CE1 ≦0.2V,CE2≧VCC-0.2V,
-
II/O = 0Ma
CE1 =VIH or CE2 = VIL
-
CE1 ≧VCC-0.2V or
.CE2≦0.2V
-L -
- LL -
TYP.
-
-
-
-
-
-
40
35
30
-
-
1.0
0.5
*Those parameters are for reference only under 50℃
MAX.
VCC+0.5
0.6
1
1
-
0.4
60
50
40
5
1.0
100
20*
50
10*
UNIT
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
µA
µA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
P80053