SMBTA06UPN View Datasheet(PDF) - Infineon Technologies
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Description
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SMBTA06UPN Datasheet PDF : 7 Pages
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SMBTA06UPN
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
≤ 105
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 80 V, IE = 0
VCB = 80 V, IE = 0 , TA = 150 °C
V(BR)CEO 80
-
-V
V(BR)CBO 80
-
-
V(BR)EBO 4
-
-
ICBO
µA
-
-
0.1
-
-
20
Collector-emitter cutoff current
VCE = 60 V, IB = 0
DC current gain2)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
Collector-emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
Base-emitter voltage2)
IC = 100 mA, VCE = 1 V
ICEO
-
hFE
100
100
VCEsat
-
VBE(ON)
-
- 100 nA
-
-
-
-
-
- 0.25 V
-
1.2
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT
- 100
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
7
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
- MHz
- pF
2
2011-10-05
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