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SMBTA06UPN(1999) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
SMBTA06UPN
(Rev.:1999)
Infineon
Infineon Technologies Infineon
SMBTA06UPN Datasheet PDF : 5 Pages
1 2 3 4 5
NPN/PNP Silicon AF Transistor Array
 High breakdown voltage
 Low collector-emitter saturation voltage
 Two (galvanic) internal isolated NPN/PNP
Transistors in one package
SMBTA 06U PN
4
5
6
3
2
1
VPW09197
C1
B2
E2
6
5
4
TR1
TR2
1
2
3
E1
B1
C2
EHA07177
Type
SMBTA 06U PN
Marking
s2P
Pin Configuration
Package
1=E 2=B 3=C 4=E 5=B 6=C SC-74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJA
RthJS
Value
Unit
80
V
80
4
500
mA
1
A
100
mA
200
330
mW
150
°C
-65 ... 150
375
K/W
105
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
1
Apr-23-1999

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