SKW30N60 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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SKW30N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW30N60

700ns

600ns

500ns

400ns

IF = 60A

IF = 30A

300ns

200ns

IF = 15A

100ns

0ns

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

24A

20A

16A

IF = 60A

I = 30A

12A

F

IF = 15A

8A

4A

0A

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

3500nC

3000nC

2500nC

2000nC

IF = 60A

IF = 30A

1500nC

1000nC

IF = 15A

500nC

0nC

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

1 0 0 0 A /µs

8 0 0 A /µs

6 0 0 A /µs

4 0 0 A /µs

2 0 0 A /µs

0 A /µs

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

9

Jul-02

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