GP350MHB06S View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

GP350MHB06S

Half Bridge IGBT Module

Dynex Semiconductor 

GP350MHB06S

1000

100

10

Diode

Transistor

1

0.001

0.01

0.1

1

10

Pulse width, tp - (s)

Fig.15 Transient thermal impedance

8/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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