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HEF4750VFD View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
HEF4750VFD
Philips
Philips Electronics Philips
HEF4750VFD Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
Frequency synthesizer
Product specification
HEF4750V
LSI
PARAMETER
SYMBOL
40
Tamb (°C
+ 25
+ 85
UNIT NOTES
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
Output TCC voltage
with respect to
TCA input voltage
V
Output PC1 sink
current
IO
Output PC1 source
current
IO
Internal resistance
of PC1
output swing
200 mV
specified output range:
0,3 VDD to 0,7 VDD Ri
Output PC1 voltage
with respect to
TCC input voltage
V
EOR generation
VEOR = VDD VTCA
Source current; HIGH
VEOR
at VOUT = 12 VDD;
output in ramp mode
TCA
IO
TCB
IO
0
−−
−−
−−
0
0,9
−−
−−
−− 0
−− 0
− − 1,1 − − −
− − 1,0 − − −
− − 1,4 − − −
−− 0
−− 0
− − 0,7 − − 0,6
− − 13
−− −
− − 2,5 − − −
V
3,4,7
mA 3,4,8
mA 3,4,9
k3,4
V
V
3,4,10
3,4,11
3,4
mA
mA
January 1995
10

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