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RF05VA2S View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
RF05VA2S
ROHM
ROHM Semiconductor ROHM
RF05VA2S Datasheet PDF : 5 Pages
1 2 3 4 5
Data Sheet
Super Fast Recovery Diode
RF05VA2S
Series
Standard Fast Recovery
Applications
High Frequency rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
   0.05
Land size figure (Unit : mm)
1.1
Features
1)Small mold type.TUMD2
2)high switching speed
3)Low forward voltage
Construction
Silicon epitaxial planer
TUMD2
Structure
0.8±0.05
ROHM : TUMD2
0.6±0.2
    0.1
dot (year week factory) + day
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
0.9±0.08
Absolute maximum ratings (TI=25C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
Direct voltage
Glass epoxy substrate mounted
60Hz half sin wave,resistive load
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
Unit
200
V
200
V
0.5
A
6
A
150
C
55 to 150 C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage
Reverse current
Reverse recovery time
VF
IF=0.5A
0.85
0.98
V
IR
VR=200V
0.01
10
μA
trr
IF=0.5A,IR=1A,Irr=0.25×IR
11
25
ns
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A

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