RD12MVS1 View Datasheet(PDF) - Mitsumi
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Description
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RD12MVS1 Datasheet PDF : 8 Pages
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< Silicon RF Power MOS FET (Discrete) >
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175M Hz
T a= + 25°C
40
f= 175M H z
Vdd= 7.2V
Idq = 1.0A
30
20
Po
Gp
80
ηｄ
60
40
10
20
Ｉｄｄ
0
-5 0
0
5 10 15 20 25 30
Pin(dBm)
Pin-Po CHARACTERISTICS @f=175M Hz
14
Po
12
10
ηd
8
90
80
Ta= 25°C
f= 175M H z
Vdd= 7.2V
70
Idq = 1.0A
60
6
50
4
Idd
40
2
30
0
20
0 200 400 600 800 1000
Pin(mW)
V dd-Po CHARACTERISTICS @f=175M Hz
25
T a= 25°C
f= 175M H z
20 Pin=0.3W
Icq = 700mA
Zg=ZI=50 ohm Idd
5
Po
4
15
3
10
2
5
1
0
0
4
6
8
10
12
V dd(V )
V gs -Ids CHARACTORISTICS 2 -25°C
8
V ds=10V
Tc =- 25~+75°C
+25°C
+75°C
6
4
2
0
0
2
4
6
8
V gs (V )
Publication Date : Oct．2011
4
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