RD12MVP1(2006) View Datasheet(PDF) - Mitsumi
Part Name
Description
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RD12MVP1 Datasheet PDF : 7 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
40
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq =1.0A
30
20
Po
Gp
80
60
ηｄ
40
10
0
0
20
Ｉｄｄ
0
5 10 15 20 25 30
Pin(dBm)
Pin-Po CHARACTERISTICS @f=175MHz
14
90
12
Po
80
10
70
8
ηd
Ta=25°C
60
f=175MHz
6
Vdd=7.2V 50
Idq=1.0A
4
Idd
40
2
30
0
0.0
0.5
1.0
Pin(W)
20
1.5
Vdd-Po CHARACTERISTICS @f=175MHz
30
Ta=25°C
f=175MHz
25
Pin=0.6W
Idq=1.0A
Zg=ZI=50 ohm
6
Po
5
20
Idd
4
15
3
10
2
5
1
4
6
8
10
12
Vdd(V)
RD12MVP1
MITSUBISHI ELECTRIC
3/7
1st Jun. 2006
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