ESM412008 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
ESM412008 Datasheet PDF : 8 Pages
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ESM4120
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c) Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
10ms half sine; with 0% V T = 125oC
RRM, j
10ms half sine; with 50% V T = 125oC
RRM, j
Max. Units
4.5
kA
101 x 103 A2s
3.6
kA
64.8 x 103 A2s
Conditions
Double side cooled
Single side cooled
Clamping force 3.5kN
with mounting compound
dc
Anode dc
Cathode dc
Double side
Single side
On-state (conducting)
Min. Max. Units
-
0.07 oC/W
- 0.133 oC/W
- 0.147 oC/W
-
0.02 oC/W
-
0.04 oC/W
-
125
oC
-55 125
oC
3.0 4.0 kN
2/8
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