NTE245 View Datasheet(PDF) - NTE Electronics

Part Name

Description

View to exact match

NTE245

Silicon Complementary Transistors Darlington Power Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Voltage

hFE

VCE(sat)

VBE

VCE = 3V, IC = 5A

IC = 5A, IB = 20mA

IC = 10A, IB = 50mA

VCE = 3V, IC = 5A

1000 – –

– – 2.0 V

– – 4.0 V

– – 3.0 V

Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%

NTE245

C

B

.135 (3.45) Max

.350 (8.89)

E

.875 (22.2)

Dia Max

Seating

Plane

NTE246

.312 (7.93) Min

.040 (1.02)

Emitter

.215 (5.45)

1.187 (30.16)

.665

(16.9)

.430

C

(10.92)

B

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

E

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