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MP04TT600 View Datasheet(PDF) - Dynex Semiconductor

Part Name
Description
View to exact match
MP04TT600
Dynex
Dynex Semiconductor Dynex
MP04TT600 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MP04TT600
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
IT(AV)
IT(RMS
ITSM
I2t
I
TSM
I2t
Visol
Mean on-state current
Half wave resistive load,
Twater (in) = 25˚C 650
A
4.5 Ltr/min
Twater (in) = 40˚C 580
A
RMS value
Twater (in) = 25˚C @ 4.5 Ltr/min
1020 A
Twater (in) = 40˚C @ 4.5 Ltr/min
912 A
Surge (non-repetitive) on-current
10ms half sine, T = 125˚C
j
14 kA
I2t for fusing
VR = 0
0.975x106 A2s
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
11.2 kA
I2t for fusing
VR = 50% VDRM
0.625x106 A2s
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
R
th(j-w)
Thermal resistance - junction to water
(per thyristor)
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Screw torque
-
Weight (nominal)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Min. Max. Units
- 0.102 ˚C/kW
- 0.106 ˚C/kW
- 0.112 ˚C/kW
-
125
˚C
40 125
˚C
6(53)
- Nm (lb.ins)
- 12(106) Nm (lb.ins)
- Refer to g
drawings
2/10
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