MMBT4403WT1G(2005) View Datasheet(PDF) - ON Semiconductor
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Description
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MMBT4403WT1G Datasheet PDF : 6 Pages
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MMBT4403WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0)
Base Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc)
Collector Cutoff Current (VCE = −35 Vdc, VEB = −0.4 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −150 mAdc, VCE = −2.0 Vdc) (Note 1)
(IC = −500 mAdc, VCE = −2.0 Vdc) (Note 1)
Collector−Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
Base−Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance (VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Small−Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = −30 Vdc, VEB = −2.0 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
Storage Time
Fall Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
−40
−40
−5.0
−
−
−
−
−
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
hFE
−
30
−
60
−
100
−
100
300
20
−
VCE(sat)
−
Vdc
−0.4
−
−0.75
VBE(sat)
Vdc
−0.75
−0.95
−
−1.3
fT
200
−
MHz
Ccb
−
8.5
pF
Ceb
−
30
pF
hie
1.5
15
kW
hre
0.1
8.0
X 10− 4
hfe
60
500
−
hoe
1.0
100
mmhos
td
−
15
ns
tr
−
20
ts
−
225
ns
tf
−
30
+2 V
0
−16 V
SWITCHING TIME EQUIVALENT TEST CIRCUIT
< 2 ns
1.0 kW
10 to 100 ms,
DUTY CYCLE = 2%
−30 V
200 W
< 20 ns
CS* < 10 pF
+14 V
0
−16 V
1.0 kW
1.0 to 100 ms,
Scope rise time < 4.0 ns
DUTY CYCLE = 2% +4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
−30 V
200 W
CS* < 10 pF
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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