MBR30H100CT View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

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MBR30H100CT

Dual Common Cathode High Voltage Schottky Rectifier

Vishay Semiconductors 

MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode High Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

TO-220AB

ITO-220AB

MBR30H90CT

MBR30H100CT

PIN 1

PIN 2

PIN 3

CASE

3

2

1

TO-263AB

K

123

MBRF30H90CT

MBRF30H100CT

PIN 1

PIN 2

PIN 3

2

1

MBRB30H90CT

MBRB30H100CT

PIN 1

K

PIN 2

HEATSINK

PRIMARY CHARACTERISTICS

IF(AV)

VRRM

IFSM

VF

IR

TJ max.

Package

15 A x 2

90 V to 100 V

275 A

0.67 V

5.0 μA

175 °C

TO-220AB, ITO-220AB,

TO-263AB

Diode variations

Dual Common Cathode

FEATURES

• Power pack

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB and ITO-220AB package)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, and

polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current 

(fig.1)

total device

per diode

VRRM

VRWM

VDC

IF(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

Peak repetitive reverse surge current per diode 

at tp = 2.0 μs, 1 kHz

Voltage rate of change (rated VR)

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

IRRM

dV/dt

TJ, TSTG

VAC

MBR30H90CT MBR30H100CT

90

100

90

100

90

100

30

15

275

1.0

10 000

- 65 to + 175

1500

UNIT

V

A

V/μs

°C

V

Revision: 13-Aug-13

1

Document Number: 88791

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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