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Part Name
Description
DSF11060SG58(2000) View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DSF11060SG58
(Rev.:2000)
Fast Recovery Diode
Dynex Semiconductor
DSF11060SG58 Datasheet PDF : 6 Pages
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DSF11060SG
10000
Conditions:
T
j
= 125˚C,
V
R
= 100V
1000
A
B
C
D
E
100
A: I
F
= 2000A
B: I
F
= 1000A
C: I
F
= 500A
D: I
F
= 200A
10
E: I
F
= 100A
1
10
100
1000
Rate of rise of reverse current dI
R
/dt - (A/
µ
s)
Fig. 5 typical reverse recovery current vs rate of rise of reverse current
0.100
d.c. Double side cooled
0.010
0.001
0.01
0.1
1
10
100
Time - (s)
Fig. 3 Maximum (limit) transient thermal impedance - junction to case - (˚CW)
4/6
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