datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

RM50 View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name
Description
View to exact match
RM50 Datasheet PDF : 3 Pages
1 2 3
MITSUBISHI FAST RECOVERY DIODE MODULES
RM50DA/CA/C1A-XXS
MEDIUM POWER, HIGH FREQUENCY USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
Parameter
VRRM
VDRM
VR
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
6
300
360
240
Symbol
IDC
IFSM
I2t
Tj
Tstg
Viso
Parameter
DC current
Surge (non-repetitive) forward current
I2t for fusing
Junction temperature
Storage temperature
Isolution voltage
Conditions
Resistive load, TC=93°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Mounting torque
Main terminal screw M4
Mounting screw M5
Weight
Typical value
12
600
720
480
Ratings
50
1000
4.2×103
–40~150
–40~125
2500
0.98~1.47
10~15
1.47~1.96
15~20
90
Unit
V
V
V
Unit
A
A
A2s
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
Repetitive reverse current
VFM
Forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
trr
Reverse recovery time
Qrr
Reverse recovery charge
Rth (j-c)
Thermal resistance
Rth (c-f)
Contact thermal resistance
*1 6 class: VR=150V 12 class: VR=300V
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=50A, instantaneous meas.
IFM=50A, di/dt=–100A/µs, VR=150/300V*1, Tj=25°C
IFM=50A, di/dt=–150A/µs, VR=150/300V*1, Tj=150°C
Junction to case
Case to fin, conductive grease applied
Min.
Limits
Typ.
1.7
Max.
20
1.8
0.2
1.5
0.4
4.5
0.6
0.3
Unit
mA
V
µs
µC
µs
µC
°C/ W
°C/ W
Feb.1999

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]