LH51BV1000JY-70LL View Datasheet(PDF) - Sharp Electronics

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Description

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LH51BV1000JY-70LL

CMOS 1M (128K × 8) Static Ram

Sharp Electronics 

LH51BV1000J

CMOS 1M (128K × 8) Static Ram

FEATURES

• Access time: 70 ns (MAX.)

• Current consumption:

Operating: 30 mA (MAX.)

5 mA (MAX.) (tRC, tWC = 1 µs)

Standby: 60 µA (MAX.)

• Data Retention:

1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C)

• Single power supply: 2.7 V to 3.6 V

• Operating temperature: -25°C to +85°C

• Fully-static operation

• Three-state output

• Not designed or rated as radiation

hardened

• Package: 32-pin 6 × 10 mm CSP

• N-type bulk silicon

DESCRIPTION

The LH51BV1000JY is a static RAM organized as

131,072 × 8 bits which provides low power standby

mode. It is fabricated using silicon-gate CMOS process

technology.

PIN CONNECTIONS

1 23 4567 8

A

A2 A3 A1

NC A4 A5

B

I/O1 A0 I/O2

A12 A6 A7

C

GND I/O3

A14 A16

D

I/O4 I/O5

A15 VCC

E

I/O7 I/O8 I/O6

CE2 A13 WE

F

A10 OE CE1

A8 A11 A9

51BV1000-1

Figure 1. Pin Connections for CSP Package

1

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