LCP1511 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
LCP1511 Datasheet PDF : 7 Pages
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1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb = 25 °C)
Symbol
Test conditions
VF
IF=5A
tp=500µs
VFP 10/700µs 1.5kV Rp=10Ω
1.2/50µs 1.5kV Rp=10Ω
2/10µs 2.5kV Rp=62Ω
(see note 1)
Note 1 : See test circuit 2 for VFP; Rp is the protection resistor located on the line card.
LCP1511D
Maximum
Unit
3
V
5
V
7
12
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C)
Symbol
Test conditions
IGT
VGND/LINE = -48V
IH
VGATE =-48V (see note 2)
VGT
at IGT
IRG
Tc=25°C VRG =-75V
Tc=70°C VRG =-75V
VDGL
VGATE= -48V (see note 3)
10/700µs 1.5kV Rp=10Ω
1.2/50µs 1.5kV Rp=10Ω
2/10µs 2.5kV Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
Note 2 :
Note 3 :
See the functional holding current (IH) test circuit 2.
See test circuit 1 for VDGL.
The oscillations with a time duration lower than 50ns are not taken into account.
Min.
0.2
150
Max.
5
2.5
5
50
10
20
25
Unit
mA
mA
V
µA
V
3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 25 °C)
Symbol
IRM
C
Tc=25°C
Tc=70°C
VR =-3V
VR =-48V
Test conditions
VGATE/LINE = -1V
VGATE/LINE = -1V
VRM =-75V
VRM =-75V
F=1MHz
F=1MHz
Maximum
5
50
100
50
Unit
µA
pF
APPLICATION NOTE
TIP 1 IN
OUT 8 TIP
GATE 2
NC 3
7
GND
6
RING 4 IN
OUT 5 RING
In order to take advantageof the ”4 point” structure
of the LCP, the TIP and RING lines go across the
device. In such case, the device will eliminate the
overvoltages generated by the parasitic induc-
tances of the wiring (Ldi/dt), especially for very fast
transients.
3/7
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