K6R1004C1D(2004) View Datasheet(PDF) - Samsung

Part Name

Description

View to exact match

K6R1004C1D
(Rev.:2004)

256K x 4 Bit (with OE) High-Speed CMOS Static RAM

Samsung 

K6R1004C1D

PRELIMINARY

PRELIMINARY

CMOS SRAM

AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)

TEST CONDITIONS

Parameter

Value

Input Pulse Levels

0V to 3V

Input Rise and Fall Times

3ns

Input and Output timing Reference Levels

1.5V

Output Loads

See below

Output Loads(A)

DOUT

ZO = 50Ω

RL = 50Ω

VL = 1.5V

30pF*

Output Loads(B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

DOUT

255Ω

+5.0V

480Ω

5pF*

* Capacitive Load consists of all components of the

test environment.

* Including Scope and Jig Capacitance

READ CYCLE*

Parameter

Symbol

Min

Read Cycle Time

tRC

10

Address Access Time

tAA

-

Chip Select to Output

tCO

-

Output Enable to Valid Output

tOE

-

Chip Enable to Low-Z Output

tLZ

3

Output Enable to Low-Z Output

tOLZ

0

Chip Disable to High-Z Output

tHZ

0

Output Disable to High-Z Output

tOHZ

0

Output Hold from Address Change

tOH

3

Chip Selection to Power Up Time

tPU

0

Chip Selection to Power DownTime tPD

-

* The above parameters are also guaranteed at industrial temperature range.

K6R1004C1D-10

Max

-

10

10

5

-

-

5

5

-

-

10

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

-5-

Rev. 3.0

July 2004

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