IXSN52N60AU1 View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

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IXSN52N60AU1

IGBT with Diode Combi Pack Short Circuit SOA Capability

IXYS CORPORATION 

Fig.1 Saturation Characteristics

80

70

60

50

40

30

20

10

0

0

TJ = 25°C

VGE = 15V

13V

11V

9V

7V

1

2

3

4

5

VCE - Volts

Fig.3 Collector-Emitter Voltage

vs. Gate-Emitter Voltage

10

9

TJ = 25°C

8

7

6

5

IC = 80A

4

3

IC = 40A

2

IC = 20A

1

0

8 9 10 11 12 13 14 15

VGE - Volts

Fig.5 Input Admittance

80

VCE = 10V

70

60

50

40

TJ = 25°C

30

20

TJ = 125°C

10

0

45678

TJ = - 40°C

9 10 11 12 13

VGE - Volts

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IXSN52N60AU1

Fig.2 Output Characterstics

200

180 TJ = 25°C

160

140

120

100

80

60

40

20

0

0246

VGE = 15V

13V

11V

9V

7V

8 10 12 14 16 18 20

VCE - Volts

Fig.4 Temperature Dependence

of Output Saturation Voltage

1.5

1.4

VGE=15V

1.3

IC = 80A

1.2

1.1

IC = 40A

1.0

0.9

IC = 20A

0.8

0.7

-50 -25 0 25 50 75 100 125 150

TJ - Degrees C

Fig.6 Temperature Dependence of

Breakdown and Threshold Voltage

1.3

1.2

BVCES

IC = 3mA

1.1

1.0

0.9

0.8

0.7

-50 -25 0

VGE8th)

IC = 4mA

25 50 75 100 125 150

TJ - Degrees C

3-5

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