RMWL05001 View Datasheet(PDF) - Raytheon Company
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RMWL05001 Datasheet PDF : 6 Pages
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RMWL05001
5 GHz Low Noise Amplifier MMIC
Description
PRODUCT INFORMATION
The RMWL05001 is a 2-stage GaAs MMIC amplifier designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL05001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
Features
Single positive supply operation
4 mil substrate
Noise figure 1.4 dB (typ.)
Small-signal gain 18 dB (typ.)
1dB compressed Pout 14 dBm (typ.)
Chip size 2.0 mm x 1.15 mm
Absolute
Maximum
Ratings
Parameter
Symbol
Positive DC voltage (+4 V Typical)
Vd
Positive DC current
ID
RF Input Power (from 50 Ω source) PIN
Operating Baseplate Temperature
TC
Storage Temperature Range
Tstg
Thermal Resistance
RJC
(Channel to Backside)
Value
+6
113
+8
-30 to +85
-55 to +125
112
Units
Volts
mA
dBm
°C
°C
°C /W
Electrical
Characteristics
(At 25°C),
50 Ω system,
Vd=+4 V
Single Bias Supply
Parameter
Min Typ Max Unit
Frequency Range
4.7
5.2 GHz
Noise Figure
1.4 2.3 dB
Gain Small Signal at Pin=-20 dBm 14 18 20 dB
Gain Variation vs. Frequency
1
dB
Gain at 1dB Compression
17
dB
Power Output at 1dB Compression
14
dBm
Parameter
Min Typ Max Unit
Drain Current at Pin=-20 dBm
50
mA
Input Return Loss (Pin=-15 dBm)
15
dB
Output Return Loss (Pin=-15 dBm)
15
dB
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 2, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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