IRHN7250 View Datasheet(PDF) - International Rectifier
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IRHN7250 Datasheet PDF : 14 Pages
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IRHN7250/IRHN8250 Devices
Post-Radiation
Figure 5. – Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure
Figure 6. – Typical On-State Resistance Vs. Neutron
Fluence Level
Figure 8a. – During Radiation
Gate Stress of VGSS = 12V
Figure 7. – Typical Transient Response
of Rad Hard HEXFET During 1 x1012 Rad
(Si)/Sec Exposure
Figure 8b. – During Radiation
VDSS Stress = 80% of BVDSS
Figure 9. – High Dose Rate
(Gamma Dot) Test Circuit
F-351
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