IRHN7250 View Datasheet(PDF) - International Rectifier

Part Name

Description

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IRHN7250

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

IRHN7250/IRHN8250 Devices

Post-Radiation

VGS = 12V

ID = 16A

Figure 1. – Typical Response of Gate Threshold Voltage

Vs. Total Dose Exposure

Figure 2. – Typical Response of On-State Resistance

Vs. Total Dose Exposure

VDS ≥ 15V

ID = 16A

Figure 3. – Typical Response of Transconductance Vs.

Total Dose Exposure

F-350

Figure 4. – Typical Response of Drain-to-Source

Breakdown Vs. Total Dose Exposure

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