IRHN7250 View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IRHN7250 Datasheet PDF : 14 Pages
| |||
IRHN7250/IRHN8250 Devices
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Radiation
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
—
—
—
2.0
8.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—— V
0.28 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— 0.10
— 0.11
— 4.0
——
— 25
— 250
— 100
— -100
— 170
— 30
— 60
— 33
— 140
— 140
— 140
2.0 —
4.1 —
4700 —
850 —
210 —
Ω
VGS = 12V, ID = 16A
VGS = 12V, ID = 26A
V
VDS = VGS, ID = 1.0 mA
S( )
VDS > 15V, IDS = 16A
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
VGS =12V, ID = 26A
nC
VDS = Max. Rating x 0.5
(see figures 23 and 31)
VDD = 100V, ID = 26A,
ns
RG = 2.35Ω
(see figure 22)
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF
f = 1.0 MHz
(see figure 22)
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
——
26
A Modified MOSFET symbol showing the
— — 104
integral reverse p-n junction rectifier.
VSD
t rr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJPCB
F-348
Junction-to-PC board
— — 1.9 V
— 820 ns
— 12 µC
Tj = 25°C, IS = 26A, VGS = 0V
Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs
VDD ≤ 50V
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
Test Conditions
— — 0.83
K/W
— TBD —
soldered to a copper-clad PC board
Share Link: 