IRFR/U9214PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-250 V VGS = 0V, ID = -250µA
-0.25 V/°C Reference to 25°C, ID = -1mA
3.0 Ω VGS = -10V, ID = -1.7A
-2.0 -4.0 V VDS = VGS, ID = -250µA
0.9 S VDS = -50V, ID = -1.7A
-100 µA VDS = -250V, VGS = 0V
-500
VDS = -200V, VGS = 0V, TJ = 150°C
100 n A VGS = 20V
-100
VGS = -20V
14
ID = -1.7A
3.1 nC VDS = -200V
6.8
VGS = -10V, See Fig. 6 and 13
11
VDD = -125V
14
20
ns
ID = -1.7A
RG =21 Ω
17
RD =70 See Fig. 10
4.5
Between lead,
D
6mm (0.25in.)
nH from package
G
7.5
and center of die contact
S
220
VGS = 0V
75 pF VDS = -25V
11
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
-2.7
A
MOSFET symbol
showing the
D
integral reverse
G
-11
p-n junction diode.
S
-5.8 V TJ = 25°C, IS = -2.7A, VGS = 0V
150 220 ns TJ = 25°C, IF = -1.7A
870 1300 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 27mH
RG = 25Ω, IAS = -2.7A. (See Figure 12)
ISD ≤ -2.7A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994