IRFN240(1996) View Datasheet(PDF) - International Rectifier

Part Name

Description

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IRFN240
(Rev.:1996)

HEXFET® POWER MOSFET

International Rectifier 

IRFN240 Device

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

100us

10

1ms

TC = 25 °C

TJ = 150 °C

Single Pulse

1

1

10

10ms

100

VDS, Drain-to-Source Voltage (V)

1000

Fig. 8 — Maximum Safe Operating Area

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10a — Switching Time Test Circuit

Fig. 10b — Switching Time Waveforms

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