DS1109SG49 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DS1109SG49

Rectifier Diode

Dynex Semiconductor 

DS1109SG

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; T = 150oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 150oC

VR = 0

Max. Units

9.2

kA

422 x 103 A2s

11.5

kA

660 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

T

Storage temperature range

stg

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Clamping force 12.0kN

with mounting compound

Anode dc

Cathode dc

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

- 0.032 oC/W

- 0.064 oC/W

- 0.064 oC/W

- 0.008 oC/W

- 0.016 oC/W

-

160

oC

-

150

oC

-55 175

oC

11.5 13.5 kN

3/7

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