IKW25T120 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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IKW25T120

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKW25T120

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TrenchStop Series

500ns

400ns

300ns

200ns

100ns

TJ=150°C

TJ=25°C

0ns

400A/µs 600A/µs 800A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

5µC

TJ=150°C

4µC

3µC

2µC

TJ=25°C

1µC

0µC

400A/µs

600A/µs

800A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

30A

TJ=150°C

25A

20A

TJ=25°C

15A

10A

5A

0A

400A/µs 600A/µs 800A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

-400A/µs

-300A/µs

TJ=25°C

TJ=150°C

-200A/µs

-100A/µs

-0A/µs

400A/µs 600A/µs 800A/µs 1000A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=600V, IF=25A,

Dynamic test circuit in Figure E)

Power Semiconductors

11

Preliminary / Rev. 1 Jul-02

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