IKA03N120H2(2013) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

IKA03N120H2
(Rev.:2013)

HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

Figure A. Definition of switching times

Figure B. Definition of switching losses

IKA03N120H2

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

rr

90% I

R

rrm

Figure C. Definition of diodes

switching characteristics

1

r1

Tj (t)

p(t)

r1

2

r2

r2

n

rn

rn

TC

Figure D. Thermal equivalent

circuit

½L



öö

DUT

(Diode)

LC



Cr

VDC

RG

DUT

(IGBT)

½L



Figure E. Dynamic test circuit

Leakage inductance L = 180nH,

Stray capacitor C = 40pF,

Relief capacitor Cr = 4nF (only for

ZVT switching)

Power Semiconductors

13

Rev. 2.3 17.07.2013

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