71V016S15 View Datasheet(PDF) - Integrated Device Technology
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71V016S15 Datasheet PDF : 9 Pages
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IDT71V016, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
VTERM(2)
Rating
Terminal Voltage with
Respect to GND
Value
Unit
–0.5 to +4.6
V
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
GND
VDD
Commercial
0°C to +70°C
0V
3.3V ± 0.3V
VTERM(3)
Terminal Voltage with
–0.5 to VCC+0.5
V
Industrial
–40°C to +85°C
0V
3.3V ± 0.3V
Respect to GND
3211 tbl 04
TA
Operating Temperature
0 to +70
oC Recommended DC Operating
TBIAS
Temperature Under Bias
–55 to +125
oC Conditions
TSTG
Storage Temperature
Symbol
–55 to +125
oC
Parameter
Min. Typ. Max. Unit
VDD Supply Voltage
3.0
3.3
3.6
V
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
50
mA
NOTES:
3211 tbl 03
E 1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
N C sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
I 2. VDDterminalsonly.
T EN SA S 3. Input,Output,andI/Oterminals;4.6Vmaximum.
GND Supply Voltage
0
0
0
V
VIH Input High Voltage – Inputs 2.0
—
4.6
V
VIH Input High Voltage – I/O
2.0
____ VDD+0.3 V
VIL Input Low Voltage
–0.5(1)
___ _
0.8
NOTE:
1. VIL (min.) = –1.5V for pulse width less than tRC/2, once per cycle.
V
3211 tbl 05
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
Parameter(1)
Conditions
Max. Unit
R C 16 N CIN Input Capacitance
VIN = 3dV
6 pF
CI/O I/O Capacitance
VOUT = 3dV
7 pF
A S 0 IG NOTE:
3211 tbl 06
P E V S DC Electrical Characteristics
1. This parameter is guaranteed by device characterization, but not production tested.
1 (VDD = 3.3V ± 0.3V, Commercial and Industrial Temperature Ranges)
L 7 E IDT71V016
D Symbol
SO ER W |ILI|
|ILO|
D E VOL
B R N VOH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
VDD = Max., VIN = GND to VDD
VDD = Max., CS = VIH, VOUT = GND to VDD
IOL = 8mA, VDD = Min.
IOH = –4mA, VDD = Min.
O O R DC Electrical Characteristics(1)
FO (VDD = 3.3V ± 0.3V, VLC = 0.2V, VHC = VDD–0.2V)
71V016S15
Min.
Max.
__ _
5
__ _
5
__ _
0.4
2.4
___
71V016S20
Unit
µA
µA
V
V
3211 tbl 07
Symbol
Parameter
Com'l
Ind.
Com'l.
Ind.
Unit
ICC
Dynam ic Operating Current
CS ≤ VIL, Outputs Open, VDD = Max., f = fMAX(2)
130
130
120
120
mA
ISB
Standby Power Supply Current (TTL Level)
CS ≥ VIH, Outputs Open, VDD = Max., f = fMAX(2)
35
35
30
30
mA
Standby Power Supply Current (CMOS Level)
ISB1
CS ≥ VHC, Outputs Open, VDD = Max., f = 0(2)
VIN ≤ VLC or VIN ≥ VHC
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
6.432
5
7
5
7
mA
3211 tbl 08
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