CM900HB-90H View Datasheet(PDF) - Powerex
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CM900HB-90H Datasheet PDF : 4 Pages
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM900HB-90H
Single IGBTMOD™ HVIGBT
900 Amperes/4500 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Coes
Cres
td(on)
VGE = 0V, VCE = 10V
VCC = 2250V, IC = 900A,
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
Switching
Turn-off Delay Time
td(off)
RG = 10Ω
Times
Fall Time
tf
Resistive Load Switching Operation
Diode Reverse Recovery Time**
trr
IE = 900A, diE/dt = -1800A/µs
Diode Reverse Recovery Charge**
Qrr
IE = 900A, diE/dt = -1800A/µs
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
162
– nF
–
12.0
– nF
–
3.6
– nF
–
–
2.4 µs
–
–
2.4 µs
–
–
6.0 µs
–
–
1.2 µs
–
–
1.8 µs
–
360*
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Rth(j-c) Q
Rth(j-c) D
Rth(c-f)
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
–
–
0.010 K/W
–
–
0.020 K/W
–
0.007
–
K/W
3
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