DSZ412SE View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

View to exact match

DSZ412SE

Avalanche Diode

Dynex Semiconductor 

DSZ412SE

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRM

Peak reverse current

V

Threshold voltage

TO

rT

Slope resistance

*This selection for series sharing only upon request.

CURVES

Conditions

At 300A peak, T = 25oC

case

At V , T = 150oC

RRM case

At 50 % VRRM, Tcase = 150oC

At Tvj = 150˚C

At Tvj =150˚C

Min. Max. Units

-

2.1

V

-

20 mA

1* 10* mA

-

1.12

V

-

3.75 mΩ

Fig.2 Maximum (limit) forward characteristics

4/9

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