HFA08PB120PBF View Datasheet(PDF) - Vishay Semiconductors
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Description
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HFA08PB120PBF Datasheet PDF : 7 Pages
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HFA08PB120
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
1200
IF = 8.0 A
-
Maximum forward voltage
VFM
IF = 16 A
See fig. 1
-
IF = 8.0 A, TJ = 125 °C
-
Maximum reverse
leakage current
VR = VR rated
-
IRM
See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.6
3.4
2.4
0.31
135
11
8.0
MAX.
-
3.3
4.3
3.1
10
1000
20
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 10
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
28
-
63
-
106
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery
current during tb
See fig. 8
IRRM1
IRRM2
Qrr1
Qrr2
dI(rec)M/dt1
dI(rec)M/dt2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 8.0 A
dIF/dt = 200 A/µs
VR = 200 V
-
4.5
-
6.2
-
140
-
335
-
133
-
85
MAX.
-
95
160
8.0
11
380
880
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
RthJC
RthJA
RthCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified (JEDEC)
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
-
40
K/W
0.25
-
6.0
-
0.21
-
12
-
(10)
HFA08PB120
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93037
Revision: 30-Jul-08
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