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Part Name
Description
FZT1053 View Datasheet(PDF) - Zetex => Diodes
Part Name
Description
View to exact match
FZT1053
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Zetex => Diodes
FZT1053 Datasheet PDF : 4 Pages
1
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4
FZT1053A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
150
250
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
CES
150 250
V
I
C
=100
µ
A
Collector-Emitter
V
CEO
75
100
Breakdown Voltage
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
150 250
V
I
C
=100
µ
A, V
EB
=1V
Emitter-Base
V
(BR)EBO
7.5
8.8
Breakdown Voltage
V
I
E
=100
µ
A
Collector Cut-Off
Current
I
CBO
0.9
10
nA
V
CB
=120V
Emitter Cut-Off Current I
EBO
Collector Emitter
I
CES
Cut-Off Current
0.3
10
1.5
10
nA
V
EB
=4V
nA
V
CES
=120V
Collector-Emitter
Saturation Voltage
V
CE(sat)
Base-Emitter
Saturation Voltage
V
BE(sat)
21
30
mV
I
C
=0.2A, I
B
=20mA*
55
75
mV
I
C
=0.5A, I
B
=20mA*
150
200
mV
I
C
=1A, I
B
=10mA*
160
210
mV
I
C
=2A, I
B
=100mA*
350
440
mV
I
C
=4.5A, I
B
=200mA*
900
1000 mV
I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On V
BE(on)
Voltage
825
950
mV
I
C
=3A, V
CE
=2V*
Static Forward Current h
FE
Transfer Ratio
Switching Times
t
on
t
off
Transition Frequency f
T
270 440
300 450 1200
300 450
40
60
20
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4.5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
162
ns
I
C
=2A, I
B1
=I
B2
=
±
20mA,
V
CC
=50V
900
ns
I
C
=2A, I
B1
=I
B2
=
±
20mA,
V
CC
=50V
140
MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=10V, f=1MHz
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